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GS78116B-12I 数据表(PDF) 7 Page - GSI Technology |
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GS78116B-12I 数据表(HTML) 7 Page - GSI Technology |
7 / 11 page Rev: 1.02 9/2001 7/11 © 1999, Giga Semiconductor, Inc. For latest documentation see http://www.gsitechnology.com. GS78116B * These parameters are sampled and are not 100% tested. Write Cycle 1: WE Controlled Write Cycle Parameter Symbol -10 -12 -15 Unit Min Max Min Max Min Max Write cycle time tWC 10 — 12 — 15 — ns Address valid to end of write tAW 7 — 8 — 10 — ns Chip enable to end of write tCW 7 — 8 — 10 — ns Data set up time tDW 5 — 6 — 7 — ns Data hold time tDH 0 — 0 — 0 — ns Write pulse width tWP 7 — 8 — 10 — ns Address set up time tAS 0 — 0 — 0 — ns Write recovery time (WE) tWR 0 — 0 — 0 — ns Write recovery time (CE) tWR1 0 — 0 — 0 — ns Output Low Z from end of write tWLZ* 3 — 3 — 3 — ns Write to output in High Z tWHZ* — 4 — 5 — 6 ns tWC Address CE WE Data In OE Data Out tAW tCW tAS tWP tWR tDW tDH tWLZ tWHZ Data valid High impedance |
类似零件编号 - GS78116B-12I |
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类似说明 - GS78116B-12I |
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