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GS8161V36CGD-250I 数据表(PDF) 10 Page - GSI Technology |
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GS8161V36CGD-250I 数据表(HTML) 10 Page - GSI Technology |
10 / 28 page GS8161V18/36CD-333/300/250 Preliminary Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Rev: 1.01 2/2005 10/28 © 2004, GSI Technology Simplified State Diagram with G First Write First Read Burst Write Burst Read Deselect R W CR CW X X WR R W R X X X CR R CW CR CR W CW W CW Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G. 2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing through a deselect cycle. Dummy read cycles increment the address counter just like normal read cycles. 3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet Data Input Set Up Time. |
类似零件编号 - GS8161V36CGD-250I |
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类似说明 - GS8161V36CGD-250I |
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