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GS8150V18AGB-250I 数据表(PDF) 7 Page - GSI Technology

部件名 GS8150V18AGB-250I
功能描述  1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
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制造商  GSI [GSI Technology]
网页  http://www.gsitechnology.com
标志 GSI - GSI Technology

GS8150V18AGB-250I 数据表(HTML) 7 Page - GSI Technology

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Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 2.5
V
VDDQ
Voltage in VDDQ Pins
–0.5 to VDD
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ + 0.5 (≤ 2.5 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDDQ + 0.5 (≤ 2.5 V max.)
V
IIN
Input Current on Any Pin
+/–100
mA dc
IOUT
Output Current on Any I/O Pin
+/–100
mA dc
TJ
Maximum Junction Temperature
125
oC
TSTG
Storage Temperature
–55 to 125
ºC
GS8150V18/36AB-357/333/300/250
Product Preview
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 4/2005
7/25
© 2003, GSI Technology
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Supply Voltage
VDD
1.7
1.8
1.95
V
1.5 V I/O Supply Voltage
VDDQ
1.4
1.5
1.6
V
1.8 V I/O Supply Voltage
VDDQ
1.7
1.8
1.9
V
Ambient Temperature
(Commercial Range Versions)
TA
0
25
70
°C
Ambient Temperature
(Industrial Range Versions)
TA
–40
25
85
°C
1
Note:
The part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted
are evaluated for worst case in the temperature range marked on the device.


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