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HSD32M64D8KP 数据表(PDF) 4 Page - Hanbit Electronics Co.,Ltd

部件名 HSD32M64D8KP
功能描述  Synchronous DRAM Module 256Mbyte (32Mx64bit),DIMM Unbuffered with Based on Stacked 16Mx8, 4Banks, 4K Ref., 3.3V
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制造商  HANBIT [Hanbit Electronics Co.,Ltd]
网页  http://www.hbe.co.kr
标志 HANBIT - Hanbit Electronics Co.,Ltd

HSD32M64D8KP 数据表(HTML) 4 Page - Hanbit Electronics Co.,Ltd

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HANBit
HSD32M64D8KP
URL:www.hbe.co.kr
-
4 -
HANBiT Electronics Co., Ltd
PIN FUNCTION DESCRIPTION
PIN
NAME
INPUTT FUNCTION
CLK
System clock
Active on the positive going edge to sample all inputs.
/CE
Chip enable
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
CKE
Clock enable
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+tSS prior to valid command.
A0 ~ A11
Address
Row/column addresses are multiplexed on the same pins.
Row address : RA0 ~ RA11, Column address : CA0 ~ CA9
BA0 ~ BA1
Bank select address
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
/RAS
Row address strobe
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
/CAS
Column
Address
strobe
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
/WE
Write enable
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
DQM0 ~ 7
Data
input/output
mask
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when DQM active. (Byte masking)
DQ0 ~ 63
Data input/output
Data inputs/outputs are multiplexed on the same pins.
Vcc/Vss
Power supply/ground
Power and ground for the input buffers and the core logic.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN ,OUT
-1.0V to 4.6V
Voltage on Vcc Supply Relative to Vss
Vcc
-1.0V to 4.6V
Power Dissipation
PD
16W
Storage Temperature
TSTG
-55oC to 150oC
Short Circuit Output Current
IOS
50mA
Notes:
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded.
Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
DC OPERATING CONDITIONS
(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70
°C))
PARAMETER
SYMBOL
MIN
TYP.
MAX
UNIT
NOTE
Supply Voltage
Vcc
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
3.0
Vcc+0.3
V
1
Input Low Voltage
VIL
-0.3
0
0.8
V
2
Output High Voltage
VOH
2.4
-
-
V
IOH = -2mA
Output Low Voltage
VOL
-
-
0.4
V
IOL = 2mA
Input leakage current
I LI
-10
-
10
uA
3


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