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CSD313E 数据表(PDF) 2 Page - Continental Device India Limited |
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CSD313E 数据表(HTML) 2 Page - Continental Device India Limited |
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2 / 3 page  Continental Device India Limited Data Sheet Page 2 of 3 Collector current IC max. 3.0 A Collector current (Peak value) ICM max. 8.0 A Total power dissipation up to TC = 25°C Ptot max. 30 W Junction temperature Tj max. 150 ºC Storage temperature Tstg –65 to +150 ºC THERMAL CHARACTERISTICS From junction to case Rth j–c = 4.17 °C/W CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 20V ICBO max. 0.1 mA IB = 0; VCE = 60V ICEO max. 5.0 mA Emitter cut-off current IC = 0; VEB = 4V IEBO max. 1.0 mA Breakdown voltages IC = 1 mA; IB = 0 VCEO min. 60 V IC = 1 mA; IE = 0 VCBO min. 60 V IE = 1 mA; IC = 0 VEBO min. 5.0 V Saturation voltage IC = 2 A; IB = 0.2 A VCEsat* max. 1.0 V Base emitter on voltage IC = 1A; VCE = 2V VBE(on)* max. 1.5 V D.C. current gain IC = 0.1A; VCE = 2V hFE* min. 40 IC = 1A; VCE = 2V** hFE* min. 40 max. 320 Transition frequency IC = 500 mA; VCE = 5V fT typ. 8 MHz * Pulse test: pulse width ≤ 300 µs; duty cycle ≤ 2.0%. ** hFE classification: C: 40-80 D: 60-120 E: 100-200 F: 160-320 CSB507, CSD313 |
类似零件编号 - CSD313E |
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类似说明 - CSD313E |
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