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2N1613 数据表(PDF) 3 Page - NXP Semiconductors |
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2N1613 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 Apr 11 3 Philips Semiconductors Product specification NPN medium power transistor 2N1613 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). THERMAL CHARACTERISTICS Note 1. Refer to TO-39 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 75 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 7V IC collector current (DC) − 500 mA ICM peak collector current − 1A IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 0.8 W Tcase = 100 °C − 1.7 W Tcase ≤ 25 °C − 3W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 218 K/W Rth j-c thermal resistance from junction to case 58.3 K/W |
类似零件编号 - 2N1613 |
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类似说明 - 2N1613 |
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