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1PS181 数据表(PDF) 4 Page - NXP Semiconductors |
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1PS181 数据表(HTML) 4 Page - NXP Semiconductors |
4 / 6 page 1996 Sep 03 4 Philips Semiconductors Product specification High-speed double diode 1PS181 GRAPHICAL DATA Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. 0 200 300 0 100 200 MBD033 100 I F (mA) T ( C) amb o single diode loaded double diode loaded (1) Tj = 150 °C; typical values. (2) Tj =25 °C; typical values. (3) Tj =25 °C; maximum values. Fig.3 Forward current as a function of forward voltage. handbook, halfpage 02 300 IF (mA) 0 100 200 MBG382 1 VF (V) (1) (3) (2) Fig.4 Reverse current as a function of junction temperature. handbook, halfpage 102 10 200 0 MBG380 100 Tj ( oC) IR ( µA) 1 10 2 10 1 (1) (2) (3) (1) VR = 80 V; maximum values. (2) VR = 80 V; typical values. (3) VR = 25 V; typical values. Fig.5 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 025 VR (V) 2.5 0 0.5 MBH191 1.0 1.5 2.0 5 Cd (pF) 10 15 20 |
类似零件编号 - 1PS181 |
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类似说明 - 1PS181 |
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