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CMPD914E 数据表(PDF) 1 Page - Central Semiconductor Corp |
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CMPD914E 数据表(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Continuous Reverse Voltage VR 75 V Peak Repetitive Reverse Voltage VRRM 120 V Continuous Forward Current IF 250 mA Peak Repetitive Forward Current IFRM 250 mA Forward Surge Current, tp=1.0 µs IFSM 4000 mA Forward Surge Current, tp=1.0 ms IFSM 2000 mA Forward Surge Current, tp=1.0 s IFSM 1000 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS BVR IR=100µA 120 150 V IR VR=20V 25 nA IR VR=75V 5.0 µA VF IF=10mA 0.720 0.850 V VF IF=100mA 0.915 0.970 V CT VR=0V, f=1.0 MHz 2.0 pF trr IR=IF=10mA, RL=100Ω, Rec. to 1.0 mA 4.0 ns CMPD914E ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE SOT-23 CASE Central Semiconductor Corp. TM R2 (6-August 2003) DESCRIPTION: The Central Semiconductor CMPD914E is an Enhanced version of the CMPD914 High Speed Switching Diode in a SOT-23 surface mount package, designed for high speed applications. MARKING CODE: C5DE FEATURED ENHANCED SPECIFICATIONS: ♦ BVR from 100V min to 120V min. (150V TYP) ♦ VF from 1.0V max to 0.85V max. (0.72V TYP) ♦ ♦ ♦ ♦ Enhanced specification. ♦♦ Additional Enhanced specification. ♦♦ |
类似零件编号 - CMPD914E |
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类似说明 - CMPD914E |
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