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IRF6655 数据表(PDF) 2 Page - International Rectifier

部件名 IRF6655
功能描述  DirectFET Power MOSFET Typical values (unless otherwise specified)
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IRF6655 数据表(HTML) 2 Page - International Rectifier

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IRF6655
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… Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.12
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
53
62
m
VGS(th)
Gate Threshold Voltage
2.8
–––
4.8
V
∆VGS(th)/∆TJ
Gate Threshold Voltage Coefficient
–––
-11
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
6.6
–––
–––
S
Qg
Total Gate Charge
–––
8.7
11.7
Qgs1
Pre-Vth Gate-to-Source Charge
–––
2.1
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
0.58
–––
nC
Qgd
Gate-to-Drain Charge
–––
2.8
4.2
Qgodr
Gate Charge Overdrive
–––
3.2
–––
See Fig. 17
Qsw
Switch Charge (Qgs2 + Qgd)
–––
3.4
–––
Qoss
Output Charge
–––
4.5
–––
nC
RG
Gate Resistance
–––
1.9
2.9
td(on)
Turn-On Delay Time
–––
7.4
–––
tr
Rise Time
–––
2.8
–––
td(off)
Turn-Off Delay Time
–––
14
–––
ns
tf
Fall Time
–––
4.3
–––
Ciss
Input Capacitance
–––
530
–––
Coss
Output Capacitance
–––
110
–––
pF
Crss
Reverse Transfer Capacitance
–––
29
–––
Coss
Output Capacitance
–––
510
–––
Coss
Output Capacitance
–––
67
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
38
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
34
(Body Diode)
e
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
31
47
ns
Qrr
Reverse Recovery Charge
–––
37
56
nC
MOSFET symbol
RG=6.0Ω
VDS = 25V
Conditions
VGS = 0V, VDS = 80V, f=1.0MHz
VGS = 0V, VDS = 1.0V, f=1.0MHz
VDS = 16V, VGS = 0V
VDD = 50V, VGS = 10V
g
VGS = 0V
ƒ = 1.0MHz
ID = 5.0A
VDS = VGS, ID = 25µA
VDS = 100V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 5.0A
g
TJ = 25°C, IF = 5.0A, VDD = 25V
di/dt = 100A/µs
g
TJ = 25°C, IS = 5.0A, VGS = 0V
g
showing the
integral reverse
p-n junction diode.
ID = 5.0A
VDS = 80V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V
VDS = 10V, ID = 5.0A
VDS = 50V


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