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Product Specification
www.jmnic.com
JMnic
Silicon PNP Power Transistors
2SA1075 2SA1076
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2SA1075
-120
V(BR)CEO
Collector-emitter
breakdown voltage
2SA1076
IC=-1mA ;RBE=∞
-160
V
2SA1075
-120
V(BR)CBO
Collector-base
breakdown voltage
2SA1076
IC=-50μA; IE=0
-160
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50μA; IC=0
-7
V
VCEsat
Collector-emitter saturation voltage
IC=-5A;IB=-0.5A
-1.8
V
VBE
Base-emitter voltage
IC=-5A;VCE=-5V
-1.7
V
2SA1075
VCB=-120V; IE=0
ICBO
Collector cut-off current
2SA1076
VCB=-160V; IE=0
-50
μA
2SA1075
VCE=-120V; IB=0
ICEO
Collector cut-off current
2SA1076
VCE=-160V; IB=0
-1
mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-50
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
60
200
hFE-2
DC current gain
IC=-7A ; VCE=-5V
40
Cob
Output capacitance
IE=0 ; VCB=-10V
300
pF
fT
Transition frequency
IC=-1A ; VCE=-10V
45
MHz
Switching times
tr
Rise time
-0.15
μs
ts
Storage time
-0.50
μs
tf
Fall time
IC=- 7.5A;RL=4Ω
IB1=- IB2=-0.75A
-0.11
μs