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ST6006 数据表(PDF) 1 Page - Stanson Technology |
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ST6006 数据表(HTML) 1 Page - Stanson Technology |
1 / 8 page N Channel Enchancement Mode MOSFET ST6006S / ST6006 60V/60A DESCRIPTION The ST6006 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This ST6006 is densigned to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safetv margin against unexpected voltage transients. PIN CONFIGURATION TO-220-3L ST6006 TO-263-2L ST6006S Page 1 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 APPLICATIONS Power Supplies Converters Power Motor controls Bridge Circuit FEATURE 20V/2.8A, RDS(ON) = 85m-ohm @VGS = 4.5V 20V/2.4A, RDS(ON) = 115m-ohm @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design |
类似零件编号 - ST6006 |
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类似说明 - ST6006 |
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