数据搜索系统,热门电子元器件搜索 |
|
SI3056PPT1-EVB 数据表(PDF) 7 Page - Silicon Laboratories |
|
SI3056PPT1-EVB 数据表(HTML) 7 Page - Silicon Laboratories |
7 / 94 page Si3056 Si3018/19/10 Rev. 1.05 7 Table 3. DC Characteristics, VD =3.3 V (VD = 3.0 to 3.6 V, TA = 0 to 70 °C) Parameter Symbol Test Condition Min Typ Max Unit High Level Input Voltage VIH 2.4 — — V Low Level Input Voltage VIL —— 0.8 V High Level Output Voltage VOH IO =–2 mA 2.4 — — V Low Level Output Voltage VOL IO = 2 mA — — 0.35 V Input Leakage Current IL –10 — 10 µA Power Supply Current, Digital1 ID VD pin — 15 — mA Total Supply Current, Sleep Mode1 ID PDN = 1, PDL = 0 — 9 — mA Total Supply Current, Deep Sleep1,2 ID PDN = 1, PDL = 1 — 1 — mA Notes: 1. All inputs at 0.4 or VD – 0.4 (CMOS levels). All inputs are held static except clock and all outputs unloaded (Static IOUT = 0mA). 2. RGDT is not functional in this state. |
类似零件编号 - SI3056PPT1-EVB |
|
类似说明 - SI3056PPT1-EVB |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |