SI4884BDY-T1 datasheet(1/7 Pages) VISHAY

部件名	SI4884BDY-T1

功能描述	N-Channel 30-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

D PWM Optimized

RoHS

COMPLIANT

Si4884BDY

Vishay Siliconix

New Product

Document Number: 73454

S–51450—Rev. A, 01-Aug-05

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)a

Qg (Typ)

30

0.0090 @ VGS = 10 V

16.5

10 5 nC

30

0.012 @ VGS = 4.5 V

13.2

10.5 nC

N-Channel MOSFET

G

D

S

SO-8

SD

GD

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4884BDY-T1—E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

"20

V

TC = 25_C

16.5

Continuous Drain Current (TJ = 150_C)

TC = 70_C

ID

13.2

Continuous Drain Current (TJ = 150_C)

TA = 25_C

ID

12.4b, c

TA = 70_C

10.0b, c

A

Pulsed Drain Current

IDM

50

Continuous Source Drain Diode Current

TC = 25_C

IS

4.0

Continuous Source-Drain Diode Current

TA = 25_C

IS

2.3b, c

TC = 25_C

4.45

Maximum Power Dissipation

TC = 70_C

PD

2.85

W

Maximum Power Dissipation

TA = 25_C

PD

2.50b, c

W

TA = 70_C

1.6b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

p 10 sec

RthJA

40

50

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

22

28

_C/W

Notes:

a.

Based on TC = 25_C.

b.

Surface mounted on 1” x 1” FR4 board.

c.

t = 10 sec

d.

Maximum under steady state conditions is 85

_C/W.

类似零件编号 - SI4884BDY-T1

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI4884BDY-T1-E3	260Kb / 10P	N-Channel 30-V (D-S) MOSFET Rev. C, 09-Feb-09

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