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STD1NK60-1 数据表(PDF) 2 Page - STMicroelectronics |
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STD1NK60-1 数据表(HTML) 2 Page - STMicroelectronics |
2 / 15 page STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 2/15 Table 3: Absolute Maximum ratings ( ) Pulse width limited by safe operating area (1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Table 4: Thermal Data (#) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec Table 5: Avalanche Characteristics ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol Parameter Value Unit DPAK / IPAK TO-92 SOT-223 VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 600 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 1.0 0.4 0.4 A ID Drain Current (continuous) at TC = 100°C 0.63 0.25 0.25 A IDM ( ) Drain Current (pulsed) 4 1.6 1.6 A PTOT Total Dissipation at TC = 25°C 30 3 3.3 W Derating Factor 0.24 0.025 0.025 W/°C dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 °C DPAK/IPAK TO-92 SOT-223 Unit Rthj-case Thermal Resistance Junction-case Max 4.16 -- -- °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 120 37.87 (#) °C/W Rthj-lead Thermal Resistance Junction-lead Max -- 40 -- °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 260 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 1A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 25 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30V ±100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.25 3 3.7 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.5 A 8 8.5 Ω |
类似零件编号 - STD1NK60-1 |
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类似说明 - STD1NK60-1 |
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