TC55NEM216ASTV55 datasheet(6/12 Pages) TOSHIBA

部件名	TC55NEM216ASTV55

功能描述	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Download	12 Pages

Scroll/Zoom	100%

制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

标志

6 / 12 page

TC55NEM216ASTV55,70

2002-10-30

6/12

AC CHARACTERISTICS AND OPERATING CONDITIONS

(Ta

= −40° to 85°C, VDD = 2.7 to 5.5 V)

READ CYCLE

TC55NEM216ASTV

55

70

SYMBOL

PARAMETER

MIN

MAX

MIN

MAX

UNIT

tRC

Read Cycle Time

70



85



tACC

Address Access Time



70



85

tCO

Chip Enable Access Time



70



85

tOE

Output Enable Access Time



35



45

tBA

Data Byte Control Access Time



70



85

tCOE

Chip Enable Low to Output Active

5



5



tOEE

Output Enable Low to Output Active

0



0



tBE

Data Byte Control Low to Output Active

5



5



tOD

Chip Enable High to Output High-Z



30



35

tODO

Output Enable High to Output High-Z



30



35

tBD

Data Byte Control High to Output High-Z



30



35

tOH

Output Data Hold Time

10



10



ns

WRITE CYCLE

TC55NEM216ASTV

55

70

SYMBOL

PARAMETER

MIN

MAX

MIN

MAX

UNIT

tWC

Write Cycle Time

70



85



tWP

Write Pulse Width

50



55



tCW

Chip Enable to End of Write

55



60



tBW

Data Byte Control to End of Write

55



60



tAS

Address Setup Time

0



0



tWR

Write Recovery Time

0



0



tODW

R/W Low to Output High-Z



30



35

tOEW

R/W High to Output Active

0



0



tDS

Data Setup Time

30



35



tDH

Data Hold Time

0



0



ns

Note:

tOD, tODO, tBD and tODW are specified in time when an output becomes high impedance, and are not judged depending on

an output voltage level.

AC TEST CONDITIONS

PARAMETER

TEST CONDITION

Input pulse level

0.2 V, VDD − 0.2 V

tR, tF

5 ns

Timing measurements

1.5 V

Reference level

1.5 V

Output load

100 pF (Include Jig)

类似零件编号 - TC55NEM216ASTV55

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	TC55NEM216AFTN55	181Kb / 11P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Toshiba Semiconductor	TC55NEM216AFTN70	181Kb / 11P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

More results

类似说明 - TC55NEM216ASTV55

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	TC58FVM5T2AFT65	799Kb / 63P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55VD1618FF-133	888Kb / 20P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC58NYG0S3EBAI4	487Kb / 65P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC554161AFTI-70	142Kb / 10P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55VEM208ASTN55	173Kb / 11P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC58NVG0S3ETA00	486Kb / 65P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC58FVM6B2ATG-65	531Kb / 62P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55V8512FTI-12	170Kb / 10P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55V4366FF-133	1Mb / 20P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55V8128BFT-12	373Kb / 10P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
	TC55V2325FF-100	1Mb / 20P	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

More results

TC55NEM216ASTV55 数据表(PDF) 6 Page - Toshiba Semiconductor

TC55NEM216ASTV55 数据表(HTML) 6 Page - Toshiba Semiconductor

类似零件编号 - TC55NEM216ASTV55

类似说明 - TC55NEM216ASTV55

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表下载

链接网址

TC55NEM216ASTV55 数据表(PDF) 6 Page - Toshiba Semiconductor

TC55NEM216ASTV55 数据表(HTML) 6 Page - Toshiba Semiconductor

类似零件编号 - TC55NEM216ASTV55

类似说明 - TC55NEM216ASTV55

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

数据表 下载

链接网址

数据表下载