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OP236TX 数据表(PDF) 1 Page - OPTEK Technologies |
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OP236TX 数据表(HTML) 1 Page - OPTEK Technologies |
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1 / 2 page  Features •Twice the power output of GaAs at the same drive current •Characterized to define infrared energy along the mechanical axis of the device •Mechanically and spectrally matched to the OP804TX/TXV and OP805TX/TXV phototransistors •Screened per MIL-PRF-19500 TX or TXV equivalent levels Description The OP235TX, TXV and OP236TX, TXV are high reliability gallium aluminum arsenide infrared emitting diodes mounted in hermetic TO-46 packages. The wavelength is centered at 890 nanometers to closely match the spectral response of silicon photoransistors. Devices are processed to Optek’s 100% screening and quality conformance program patterned after MIL-PRF-19500. After 100% screening, Group A and B are performed on every lot, and a Group C test is performed every six months. The OP235TX, TXV and OP236TX, TXV have lens cans providing a narrow beam angle (18 o between half power points). The narrow beam angle and the specified radiant intensity allow ease of design in beam interrupt applications with the OP804TX, TXV and OP805TX, TXV series of high reliability phototransistors. Absolute Maximum Ratings (TA = 25 o C unless otherwise noted) Forward DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 o C to +125 o C Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 o C to +150 o C Lead Soldering Temperature [1/16 inch (1.6mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240 o C (1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW (2) Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow soldering. (2) Derate linearly 2.00 mW/ o C above 25o C. (3) Ee(APT) is a measurement of the average radiant intensity within the cone formed by the measurement surface. The cone is outlined by a radius of 1.429 inches (36.30 mm) measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250 inches (6.35 mm) in diameter forming a 10 o cone. Ee(APT) is not necessarily uniform within the measured area. Typical screening and lot acceptance tests are provided on page 13-4. Product Bulletin OP235TX September 1996 Hi-Reliability GaAlAs Infrared Emitting Diodes Types OP235TX, OP235TXV, OP236TX, OP236TXV Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 13-28 |
类似零件编号 - OP236TX |
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类似说明 - OP236TX |
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