数据搜索系统,热门电子元器件搜索 |
|
STK800 数据表(PDF) 4 Page - STMicroelectronics |
|
STK800 数据表(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STK800 4/12 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. On/off states Symbol Parameter Test condictions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS= 0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc=125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±16V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 12.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 10A VGS= 4.5V, ID= 10A 0.006 0.0075 0.0078 0.0098 Ω Ω Table 4. Dynamic Symbol Parameter Test condictions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS =15V, ID = 10 A 44 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 1380 450 75 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15V, ID = 20A VGS =4.5V (see Figure 14) 13.4 3.4 4.5 nC nC nC |
类似零件编号 - STK800 |
|
类似说明 - STK800 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |