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LM5025BSD 数据表(PDF) 6 Page - National Semiconductor (TI) |
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LM5025BSD 数据表(HTML) 6 Page - National Semiconductor (TI) |
6 / 16 page Electrical Characteristics (Continued) Specifications with standard typeface are for T J = 25˚C, and those with boldface type apply over full Operating Junction Temperature range.V IN = 48V, VCC = 10V, RT = 26.7k Ω,R SET = 27.4k Ω) unless otherwise stated (Note 3) Symbol Parameter Conditions Min Typ Max Units CS2 Sink Impedance (Post Fault Discharge) CS2 = 0.6V 55 95 Ω CS1 and CS2 Leakage Current CS = CS Threshold - 100mV 1 µA Soft-Start Soft-start Current Source Normal 17 22 27 µA Soft-start Current Source following a CS2 event 0.5 1 1.5 µA Oscillator Frequency1 T A = 25˚C T J =Tlow to Thigh 180 175 200 220 225 kHz Frequency2 RT = 13.3 k Ω 400 kHz T J =Tlow to Thigh 360 440 T J = 0˚C to 125˚C 364 436 Sync threshold 2 V Min Sync Pulse Width 100 ns Sync Frequency Range 160 kHz PWM Comparator Delay to Output COMP step 5V to 0V Time to onset of OUT_A transition low 40 ns Maximum Duty Cycle 1 Measured at OUT_A 73 % Maximum Duty Cycle 2 Measured at OUT_A; RT = 13.3K 66 71 75 COMP to PWM Offset 0.75 1 1.15 V COMP Input Current COMP = 4V, SS open 50 80 µA Volt x Second Clamp Ramp Clamp Level Delta RAMP measured from onset of OUT_A to Ramp peak. COMP = 5V 2.4 2.5 2.6 V UVLO Shutdown Undervoltage Shutdown Threshold 2.44 2.5 2.56 V Undervoltage Shutdown Hysteresis 16 20 24 µA Output Section OUT_A High Saturation MOS Device @ Iout = -10mA, 5 10 Ω OUTPUT_A Peak Current Sink Bipolar Device @ Vcc/2 3 A OUT_A Low Saturation MOS Device @ Iout = 10mA, 6 9 Ω OUTPUT_A Rise Time C gate = 2.2nF 20 ns OUTPUT_A Fall Time C gate = 2.2nF 15 ns www.national.com 6 |
类似零件编号 - LM5025BSD |
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类似说明 - LM5025BSD |
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