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LM5025BSD 数据表(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 LM5025BSD
功能描述  Active Clamp Voltage Mode PWM Controller
Download  16 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LM5025BSD 数据表(HTML) 6 Page - National Semiconductor (TI)

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Electrical Characteristics (Continued)
Specifications with standard typeface are for T
J = 25˚C, and those with boldface type apply over full Operating Junction
Temperature range.V
IN = 48V, VCC = 10V, RT = 26.7k
Ω,R
SET = 27.4k
Ω) unless otherwise stated (Note 3)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
CS2 Sink Impedance
(Post Fault Discharge)
CS2 = 0.6V
55
95
CS1 and CS2
Leakage Current
CS = CS Threshold -
100mV
1
µA
Soft-Start
Soft-start Current
Source Normal
17
22
27
µA
Soft-start Current
Source following a
CS2 event
0.5
1
1.5
µA
Oscillator
Frequency1
T
A = 25˚C
T
J =Tlow to Thigh
180
175
200
220
225
kHz
Frequency2
RT = 13.3 k
400
kHz
T
J =Tlow to Thigh
360
440
T
J = 0˚C to 125˚C
364
436
Sync threshold
2
V
Min Sync Pulse Width
100
ns
Sync Frequency
Range
160
kHz
PWM Comparator
Delay to Output
COMP step 5V to 0V
Time to onset of OUT_A
transition low
40
ns
Maximum Duty Cycle
1
Measured at OUT_A
73
%
Maximum Duty Cycle
2
Measured at OUT_A;
RT = 13.3K
66
71
75
COMP to PWM Offset
0.75
1
1.15
V
COMP Input Current
COMP = 4V, SS open
50
80
µA
Volt x Second Clamp
Ramp Clamp Level
Delta RAMP measured
from onset of OUT_A to
Ramp peak.
COMP = 5V
2.4
2.5
2.6
V
UVLO Shutdown
Undervoltage
Shutdown Threshold
2.44
2.5
2.56
V
Undervoltage
Shutdown Hysteresis
16
20
24
µA
Output Section
OUT_A High
Saturation
MOS Device @ Iout =
-10mA,
5
10
OUTPUT_A Peak
Current Sink
Bipolar Device @ Vcc/2
3
A
OUT_A Low
Saturation
MOS Device @ Iout =
10mA,
6
9
OUTPUT_A Rise Time
C
gate = 2.2nF
20
ns
OUTPUT_A Fall Time
C
gate = 2.2nF
15
ns
www.national.com
6


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