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SS8050LT1 数据表(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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SS8050LT1 数据表(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
1 / 2 page 1.3 2.4 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR( NPN ) FEATURES Power dissipation PCM : 0.3 W(Tamb=25℃) Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40 V , IE=0 0.1 μA Collector cut-off current ICEO VCB=20V , IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA hFE(1) VCE=1V, IC= 100m A 120 350 DC current gain hFE(2) VCE=1V, IC= 800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800 mA, IB= 80m A 0.5 V Base-emitter saturation voltage VBE(sat) IC=800 mA, IB= 80m A 1.2 V Transition frequency fT VCE=10V, IC= 50mA f=30MHz 100 MHz CLASSIFICATION OF hFE(1) Rank L H Range 120-200 200-350 DEVICE MARKING: 8050LT1=Y1 Unit : mm SOT—23 1. BASE 2. EMITTER 3. COLLECTOR |
类似零件编号 - SS8050LT1 |
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类似说明 - SS8050LT1 |
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