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AO3400 数据表(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO3400 数据表(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 4 page Symbol VDS VGS IDM TJ, TSTG Symbol Typ Max 65 90 85 125 RθJL 43 60 W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W ±12 Gate-Source Voltage Drain-Source Voltage 30 Continuous Drain Current A Maximum Units Parameter TA=25°C TA=70°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V 4.9 30 Pulsed Drain Current B Power Dissipation A TA=25°C Junction and Storage Temperature Range A PD °C 1.4 1 -55 to 150 TA=70°C ID 5.8 AO3400 N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 33mΩ (VGS = 4.5V) RDS(ON) < 52mΩ (VGS = 2.5V) General Description The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400 is Pb-free (meets ROHS & Sony 259 specifications). AO3400L is a Green Product ordering option. AO3400 and AO3400L are electrically identical. G D S S G D TO-236 (SOT-23) Top View Alpha & Omega Semiconductor, Ltd. |
类似零件编号 - AO3400 |
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类似说明 - AO3400 |
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