ZXTDBM832 datasheet(4/6 Pages) ZETEX

部件名	ZXTDBM832

功能描述	MPPS-TM Miniature Package Power Solutions DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

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制造商	ZETEX [Zetex Semiconductors]

网页	http://www.diodes.com/

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4 / 6 page

ZXTDBM832

ISSUE 1 - JUNE 2002

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO

40

100

V

IC=100 A

Collector-Emitter Breakdown

Voltage

V(BR)CEO

20

27

V

IC=10mA*

Emitter-Base Breakdown Voltage

V(BR)EBO

7.5

8.2

V

IE=100 A

Collector Cut-Off Current

ICBO

25

nA

VCB=32V

Emitter Cut-Off Current

IEBO

25

nA

VEB=6V

Collector Emitter Cut-Off Current

ICES

25

nA

VCES=16V

Collector-Emitter Saturation

Voltage

VCE(sat)

8

90

115

190

210

15

150

135

250

270

mV

IC=0.1A, IB=10mA*

IC=1A, IB=10mA*

IC=2A, IB=50mA*

IC=3A, IB=100mA*

IC=4.5A, IB=125mA*

Base-Emitter Saturation Voltage

VBE(sat)

0.98

1.05

V

IC=4.5A, IB=125mA*

Base-Emitter Turn-On Voltage

VBE(on)

0.88

0.95

V

IC=4.5A, VCE=2V*

Static Forward Current Transfer

Ratio

hFE

200

300

200

100

400

450

360

180

IC=10mA, VCE=2V*

IC=0.2A, VCE=2V*

IC=2A, VCE=2V*

IC=6A, VCE=2V*

Transition Frequency

fT

100

140

MHz

IC=50mA, VCE=10V

f=100MHz

Output Capacitance

Cobo

23

30

pF

VCB=10V, f=1MHz

Turn-On Time

t(on)

170

ns

VCC=10V, IC=3A

IB1=IB2=10mA

Turn-Off Time

t(off)

400

ns

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

类似零件编号 - ZXTDBM832

制造商	部件名	数据表	功能描述
Diodes Incorporated	ZXTDBM832	432Kb / 6P	DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

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