Vishay Siliconix

Si4496DY_RC

Document Number: 74109

Revision 02-Sep-05

www.vishay.com

1

R-C Thermal Model Parameters

DESCRIPTION

The parametric values in the R-C thermal model have

been derived using curve-fitting techniques. These

techniques are described in "A Simple Method of

Generating Thermal Models for a Power MOSFET"[1].

When implemented in P-Spice, these values have

matching characteristic curves to the Single Pulse

Transient

Thermal

Impedance

curves

for

the

MOSFET.

R-C values for the electrical circuit in the Foster/Tank

and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in

P-SPICE, refer to Application Note AN609 Thermal Simulations Of

Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data

sheet of the same number for guaranteed specification limits.

R-C VALUES FOR TANK CONFIGURATION

Thermal Resistance (°C/W)

Junction to

Ambient

Case

Foot

RT1

2.3490

N/A

250.9288 m

RT2

29.5589

N/A

6.7329

RT3

32.0670

N/A

9.1880

RT4

26.1202

N/A

1.7701

Thermal Capacitance (Joules/°C)

Junction to

Ambient

Case

Foot

CT1

1.1969 m

N/A

563.0696 µ

CT2

32.0544 m

N/A

13.6449 m

CT3

1.4071

N/A

174.2752 m

CT4

3.6901

N/A

4.8071 m