VX80100PWHM3SLASHP datasheet(2/5 Pages) VISHAY

部件名	VX80100PWHM3/P

功能描述	Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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VX80100PW

www.vishay.com

Vishay General Semiconductor

Revision: 09-Sep-2020

2

Document Number: 87163

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

 5 ms

Note

(1) Thermal resistance junction-to-case to follow JEDEC® 51-14 transient dual interface test method (TDIM)

Note

(1) AEC-Q101 qualified



ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Instantaneous forward voltage per diode

IF = 10 A

TJ = 25 °C

VF (1)

0.48

-

V

IF = 20 A

0.57

-

IF = 40 A

0.73

0.80

IF = 10 A

TJ = 125 °C

0.41

-

IF = 20 A

0.52

-

IF = 40 A

0.65

0.71

Reverse current at rated VR per diode

VR = 70 V

TJ = 25 °C

IR (2)

0.016

-

mA

TJ = 125 °C

15.5

-

VR = 100 V

TJ = 25 °C

-

0.8

TJ = 125 °C

29

80

Typical junction capacitance

4.0 V, 1 MHz

CJ

3250

-

pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VX80100PW

UNIT

Typical thermal resistance per device

RJC (1)

0.6

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

VX80100PW-M3/P

5.64

P

25/tube

Tube

VX80100PWHM3/P (1)

5.64

P

25/tube

Tube

类似零件编号 - VX80100PWHM3/P

制造商	部件名	数据表	功能描述
Vishay Siliconix	VX80170PW	128Kb / 5P	Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier
	VX80170PW-M3/P	128Kb / 5P	Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier
	VX80170PWHM3/P	128Kb / 5P	Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

More results

类似说明 - VX80100PWHM3/P

制造商	部件名	数据表	功能描述
Vishay Siliconix	V41M103C	147Kb / 5P	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.40 V at IF = 5 A Revision: 22-Dec-2020
	V41103C	147Kb / 5P	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A Revision: 22-Dec-2020
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	VX4045C	118Kb / 5P	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.30 V at IF = 5.0 A Revision: 26-Oct-2020
	VX6045PW	125Kb / 5P	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.27 V at IF = 5.0 A Revision: 19-Oct-2020
	VX60M60C	127Kb / 5P	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.33 V at IF = 5.0 A Revision: 26-Oct-2020
	VX80M60PW	126Kb / 5P	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 10 A Revision: 26-Oct-2020
	VX80M100PW	132Kb / 5P	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.44 V at IF = 10 A Revision: 29-Jul-2020
	VX4060C	127Kb / 5P	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.31 V at IF = 5.0 A Revision: 26-Oct-2020
	V40DM100C	111Kb / 5P	Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier 01-Jan-2022
	VX60120C	132Kb / 5P	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5.0 A Revision: 28-Oct-2020

More results

VX80100PWHM3/P 数据表(PDF) 2 Page - Vishay Siliconix

VX80100PWHM3/P 数据表(HTML) 2 Page - Vishay Siliconix

类似零件编号 - VX80100PWHM3/P

类似说明 - VX80100PWHM3/P

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VX80100PWHM3/P 数据表(PDF) 2 Page - Vishay Siliconix

VX80100PWHM3/P 数据表(HTML) 2 Page - Vishay Siliconix

类似零件编号 - VX80100PWHM3/P

类似说明 - VX80100PWHM3/P

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数据表 下载

链接网址

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