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2SD1754A 数据表(PDF) 1 Page - Panasonic Semiconductor |
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2SD1754A 数据表(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Power Transistors 2SD1754, 2SD1754A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio s Features q High foward current transfer ratio hFE q Satisfactory linearity of foward current transfer ratio hFE q I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. s Absolute Maximum Ratings (T C=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg Ratings 80 100 60 80 6 6 3 1 15 1.3 150 –55 to +150 Unit V V V A A A W ˚C ˚C 2SD1754 2SD1754A 2SD1754 2SD1754A TC=25°C Ta=25 °C s Electrical Characteristics (T C=25˚C) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Symbol ICBO ICEO IEBO VCEO hFE * VCE(sat) fT Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VEB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz min 60 80 500 typ 30 max 100 100 100 100 1500 1 Unit µA µA µA V V MHz 2SD1754 2SD1754A 2SD1754 2SD1754A *h FE Rank classification Rank Q P hFE 500 to 1000 800 to 1500 Unit: mm 1:Base 2:Collector 3:Emitter I Type Package Unit: mm 1:Base 2:Collector 3:Emitter I Type Package (Y) 7.0 ±0.3 3.0 ±0.2 3.5 ±0.2 4.6 ±0.4 2 13 1.1 ±0.1 0.75 ±0.1 2.3 ±0.2 0.85 ±0.1 0.4 ±0.1 7.0 ±0.3 0.75 ±0.1 2.3 ±0.2 4.6 ±0.4 1.1 ±0.1 2.0 ±0.2 0.9 ±0.1 3.5 ±0.2 3.0 ±0.2 123 0 to 0.15 0 to 0.15 2.5 0.5 max. |
类似零件编号 - 2SD1754A |
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类似说明 - 2SD1754A |
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