VX80M60PWHM3SLASHP datasheet(3/5 Pages) VISHAY

部件名	VX80M60PWHM3/P

功能描述	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 10 A

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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VX80M60PW

www.vishay.com

Vishay General Semiconductor

Revision: 26-Oct-2020

3

Document Number: 87185

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C, unless otherwise noted)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Average Power Loss Characteristics

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

10

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10000

0

10

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0

255075

100

125

150

175

Axis Title

Case Temperature (°C)

T

C = 146.3°C, RthJC = 0.6 °C/W

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10000

0

5.0

10.0

15.0

20.0

25.0

30.0

0

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50

Axis Title

Average Forward Current (A)

D = 0.1

D = 0.2

D = 0.3

D = 0.5

D = 0.8

D = 1.0

D = tp/T

T

tp

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10000

0.1

1

10

100

0

0.1

0.2

0.3

0.4

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0.7

Axis Title

Instantaneous Forward Voltage (V)

T

J = 100 °C

T

J = 125 °C

T

J = 25 °C

T

J = -40 °C

T

J = 150 °C

T

J = 175 °C

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10000

0.00001

0.0001

0.001

0.01

0.1

1

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Axis Title

Percent of Rated Peak Reverse Voltage (%)

T

J = 150 °C

T

J = 125 °C

T

J = 100 °C

T

J = 25 °C

T

J = -40 °C

T

J = 175 °C

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100

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10000

100

1000

10 000

0.1

1

10

100

Axis Title

Reverse Voltage (V)

T

J = 25 °C

f = 1.0 MHz

V

sig = 50 mVp-p

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100

1000

10000

0.1

1

0.01

0.1

1

10

100

Axis Title

t - Pulse Duration (s)

Junction to case

类似零件编号 - VX80M60PWHM3/P

制造商	部件名	数据表	功能描述
Vishay Siliconix	VX80M60PWHM3/P	132Kb / 5P	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.44 V at IF = 10 A Revision: 29-Jul-2020

More results

类似说明 - VX80M60PWHM3/P

制造商	部件名	数据表	功能描述
Vishay Siliconix	VE1045C-E3	133Kb / 4P	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.37 V at IF = 2.5 A Revision: 20-Dec-13
	V60170PW-M3	94Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A Revision: 04-Dec-13
	V80100P	107Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.425 V at IF = 10 A Revision: 26-May-08
	V60H150PW-M3	94Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A Revision: 04-Dec-13
	V80170PW-M3	94Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 10 A Revision: 04-Dec-13
	V80H150PW-M3	94Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 10 A Revision: 04-Dec-13
	V60100P	107Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10 A Revision: 26-May-08
	VT6045C-M3	135Kb / 5P	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A Revision: 15-Dec-16
	VF20100R	83Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A Revision: 17-Aug-15
	V30100PW-M3	87Kb / 4P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 8 A Revision: 20-Dec-13
	V40D120C-M3	109Kb / 5P	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.45 V at IF = 5 A Revision: 06-Feb-15

More results

VX80M60PWHM3/P 数据表(PDF) 3 Page - Vishay Siliconix

VX80M60PWHM3/P 数据表(HTML) 3 Page - Vishay Siliconix

类似零件编号 - VX80M60PWHM3/P

类似说明 - VX80M60PWHM3/P

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1 2 3 4 5

数据表下载

链接网址

VX80M60PWHM3/P 数据表(PDF) 3 Page - Vishay Siliconix

VX80M60PWHM3/P 数据表(HTML) 3 Page - Vishay Siliconix

类似零件编号 - VX80M60PWHM3/P

类似说明 - VX80M60PWHM3/P

Html Pages

1 2 3 4 5

数据表 下载

链接网址

数据表下载