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STP3NK60Z 数据表(PDF) 1 Page - VBsemi Electronics Co.,Ltd

部件名 STP3NK60Z
功能描述  N-Channel 650 V (D-S) MOSFET
Download  9 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.cn
标志 VBSEMI - VBsemi Electronics Co.,Ltd

STP3NK60Z 数据表(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS directive 2002/95/EC
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A (see fig. 12).
c. ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. Drain current limited by maximum junction temperature.
PRODUCT SUMMARY
VDS (V)
650
RDS(on) (Ω)VGS = 10 V
1.7
Qg (Max.) (nC)
48
Qgs (nC)
12
Qgd (nC)
19
Configuration
Single
Available
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
± 30
Continuous Drain Currente
VGS at 10 V
TC = 25 °C
ID
A
Continuous Drain Current
TC = 100 °C
4.2
Pulsed Drain Currenta
IDM
18
Linear Derating Factor
0.48
W/°C
Single Pulse Avalanche Energyb
EAS
325
mJ
Repetitive Avalanche Currenta
IAR
4
A
Repetitive Avalanche Energya
EAR
6mJ
Maximum Power Dissipation
TC = 25 °C
PD
60
W
Peak Diode Recovery dV/dtc
dV/dt
2.8
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)d
for 10 s
300
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
S
N-Channel MOSFET
G
D
TO-220AB
Top View
GD S
4.5
N-Channel
650 V (D-S)MOSFET
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
STP3NK60Z
1


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