STP3NB60 datasheet(7/9 Pages) VBSEMI

部件名	STP3NB60

功能描述	N-Channel 650 V (D-S) MOSFET

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制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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Fig. 14 - For N-Channel

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple

≤ 5 %

Body diode forward drop

Re-applied

voltage

Reverse

recovery

current

Body diode forward

current

VGS = 10 V*

VDD

ISD

Driver gate drive

D.U.T. ISD waveform

D.U.T. VDS waveform

Inductor crurent

D =

P.W.

Period

+

-

+

-

* VGS = 5 V for logic level devices

Peak Diode Recovery dV/dt Test Circuit

RG

VDD

• dV/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by duty factor "D"

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

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STP3NB60

7

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