数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

STN4546S8RG 数据表(PDF) 2 Page - VBsemi Electronics Co.,Ltd

部件名 STN4546S8RG
功能描述  N-Channel 100-V (D-S) MOSFET
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.com
标志 VBSEMI - VBsemi Electronics Co.,Ltd

STN4546S8RG 数据表(HTML) 2 Page - VBsemi Electronics Co.,Ltd

  STN4546S8RG Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd STN4546S8RG Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd STN4546S8RG Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd STN4546S8RG Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd STN4546S8RG Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd STN4546S8RG Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd STN4546S8RG Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd STN4546S8RG Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
100
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
110
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 12.5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.5
5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
1
µA
VDS = 100 V, VGS = 0 V, TJ = 125 °C
50
On-State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
50
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A
0.0185
Forward Transconductancea
gfs
VDS = 15 V, ID = 15 A
33
S
Dynamicb
Input Capacitance
Ciss
VDS = 50 V, VGS = 0 V, f = 1 MHz
2400
pF
Output Capacitance
Coss
230
Reverse Transfer Capacitance
Crss
80
Total Gate Charge
Qg
VDS = 50 V, VGS = 10 V, ID = 50 A
38
nC
Gate-Source Charge
Qgs
14
Gate-Drain Charge
Qgd
Gate Resistance
Rg
f = 1 MHz
1.6
2.5
Turn-On Delay Time
td(on)
VDD = 50 V, RL = 1 
ID  50 A, VGEN = 10 V, Rg = 1 
12
20
ns
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
18
35
Fall Time
tf
815
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
IS
TC = 25 °C
50
A
Pulse Diode Forward Currenta
ISM
100
Body Diode Voltage
VSD
IS = 15 A
0.85
1.5
V
Body Diode Reverse Recovery Time
trr
IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C
80
120
ns
Body Diode Reverse Recovery Charge
Qrr
160
240
nC
Reverse Recovery Fall Time
ta
57
ns
Reverse Recovery Rise Time
tb
23
70
12
STN4546S8RG
2
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw


类似零件编号 - STN4546S8RG

制造商部件名数据表功能描述
logo
Stanson Technology
STN4546 STANSON-STN4546 Datasheet
363Kb / 6P
   STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
logo
SHENZHEN DOINGTER SEMIC...
STN4546 DOINGTER-STN4546 Datasheet
1Mb / 4P
   N-Channel MOSFET uses advanced trench technology
More results

类似说明 - STN4546S8RG

制造商部件名数据表功能描述
logo
Vishay Siliconix
SI2328DS VISHAY-SI2328DS Datasheet
41Kb / 4P
   N-Channel 100-V (D-S) MOSFET
Rev. A, 25-Dec-01
SIR870ADP_1209 VISHAY-SIR870ADP_1209 Datasheet
481Kb / 13P
   N-Channel 100 V (D-S) MOSFET
Rev. A, 28-Nov-11
SIR876DP VISHAY-SIR876DP Datasheet
191Kb / 9P
   N-Channel 100 V (D-S) MOSFET
Rev. B, 22-Nov-10
SIR882ADP VISHAY-SIR882ADP_15 Datasheet
336Kb / 14P
   N-Channel 100 V (D-S) MOSFET
Rev. A, 15-Aug-11
SI7456CDP VISHAY-SI7456CDP Datasheet
132Kb / 7P
   N-Channel 100 V (D-S) MOSFET
Rev. A, 05-Apr-10
logo
Analog Power
AM90N10-07B ANALOGPOWER-AM90N10-07B Datasheet
365Kb / 5P
   N-Channel 100-V (D-S) MOSFET
AM290N10-02FP ANALOGPOWER-AM290N10-02FP Datasheet
317Kb / 5P
   N-Channel 100-V (D-S) MOSFET
logo
Vishay Siliconix
SUM70040M VISHAY-SUM70040M Datasheet
173Kb / 8P
   N-Channel 100 V (D-S) MOSFET
Rev. A, 17-Aug-15
SUA70060E VISHAY-SUA70060E Datasheet
200Kb / 8P
   N-Channel 100 V (D-S) MOSFET
Rev. A, 06-Jun-16
SUD70090E VISHAY-SUD70090E Datasheet
201Kb / 8P
   N-Channel 100 V (D-S) MOSFET
Rev. A, 01-Feb-16
SI2392DS VISHAY-SI2392DS Datasheet
245Kb / 10P
   N-Channel 100 V (D-S) MOSFET
Rev. A, 15-Apr-13
More results


Html Pages

1 2 3 4 5 6 7 8


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com