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STN4546S8RG 数据表(PDF) 2 Page - VBsemi Electronics Co.,Ltd |
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STN4546S8RG 数据表(HTML) 2 Page - VBsemi Electronics Co.,Ltd |
2 / 8 page Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V VDS Temperature Coefficient V DS/TJ ID = 250 µA 110 mV/°C VGS(th) Temperature Coefficient V GS(th)/TJ - 12.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 50 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 15 A 0.0185 Forward Transconductancea gfs VDS = 15 V, ID = 15 A 33 S Dynamicb Input Capacitance Ciss VDS = 50 V, VGS = 0 V, f = 1 MHz 2400 pF Output Capacitance Coss 230 Reverse Transfer Capacitance Crss 80 Total Gate Charge Qg VDS = 50 V, VGS = 10 V, ID = 50 A 38 nC Gate-Source Charge Qgs 14 Gate-Drain Charge Qgd Gate Resistance Rg f = 1 MHz 1.6 2.5 Turn-On Delay Time td(on) VDD = 50 V, RL = 1 ID 50 A, VGEN = 10 V, Rg = 1 12 20 ns Rise Time tr 10 20 Turn-Off Delay Time td(off) 18 35 Fall Time tf 815 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode IS TC = 25 °C 50 A Pulse Diode Forward Currenta ISM 100 Body Diode Voltage VSD IS = 15 A 0.85 1.5 V Body Diode Reverse Recovery Time trr IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C 80 120 ns Body Diode Reverse Recovery Charge Qrr 160 240 nC Reverse Recovery Fall Time ta 57 ns Reverse Recovery Rise Time tb 23 70 12 STN4546S8RG 2 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw |
类似零件编号 - STN4546S8RG |
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类似说明 - STN4546S8RG |
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