STN2NF10 datasheet(3/6 Pages) VBSEMI

部件名	STN2NF10

功能描述	N-Channel 100-V (D-S) MOSFET

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制造商	VBSEMI [VBsemi Electronics Co.,Ltd]

网页	www.VBsemi.com

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3 / 6 page

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0

8

16

24

32

40

VGS = 4.5 V

ID - Drain Current (A)

VGS = 10 V

0

2

4

6

8

10

04

8

12

16

20

ID = 6.0 V

VDS = 30 V

Qg - Total Gate Charge (nC)

2.0

2.5

1

10

50

0.00

0.5

1.0

1.5

TJ = 25 °C

TJ = 175 °C

VSD - Source-to-Drain Voltage (V)

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

300

600

900

1200

1500

1800

2100

0

Crss

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

- 50

- 25

0

25

50

75

100

125

150

175

VGS = 10 V

ID = 6.0 A

TJ - Junction Temperature (°C)

0.00

0.01

0.02

0.03

0.04

0.05

0.06

02

4

6

8

10

ID = 6.0 A

VGS - Gate-to-Source Voltage (V)

15

30

45

60

75

90

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STN2NF10

3

类似零件编号 - STN2NF10

制造商	部件名	数据表	功能描述
STMicroelectronics	STN2NF10	259Kb / 8P	N-CHANNEL 100V - 0.23ohm - 2A SOT-223 STripFET??II POWER MOSFET
STMicroelectronics	STN2NF10	248Kb / 13P	N-channel 100V - 0.23廓 - 2.4A - SOT-223 STripFET??II Power MOSFET
Guangdong Kexin Industr...	STN2NF10	1Mb / 5P	N-Channel MOSFET
STMicroelectronics	STN2NF10	248Kb / 13P	N-channel 100V - 0.23廓 - 2.4A - SOT-223 STripFET??II Power MOSFET

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类似说明 - STN2NF10

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