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TRS12E65F 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 TRS12E65F
功能描述  SiC Schottky Barrier Diode
Download  6 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TRS12E65F 数据表(HTML) 2 Page - Toshiba Semiconductor

  TRS12E65F Datasheet HTML 1Page - Toshiba Semiconductor TRS12E65F Datasheet HTML 2Page - Toshiba Semiconductor TRS12E65F Datasheet HTML 3Page - Toshiba Semiconductor TRS12E65F Datasheet HTML 4Page - Toshiba Semiconductor TRS12E65F Datasheet HTML 5Page - Toshiba Semiconductor TRS12E65F Datasheet HTML 6Page - Toshiba Semiconductor  
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TRS12E65F
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Repetitive peak reverse voltage
Forward DC current
Forward pulse current
Power dissipation
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Mounting torque
Symbol
VRRM
IF(DC)
IFP
PD
IFSM
Tj
Tstg
TOR
Note
(Note 1)
(Note 2)
(Note 3)
Rating
650
12
120
115
97
175
-55 to 175
0.6
Unit
V
A
A
W
A
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: t = 50 µs
Note 2: Tc = 25
Note 3: f = 50 Hz (half-sine wave, t = 10 ms)
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Thermal resistance (junction-to-case)
Thermal resistance (junction-to-ambient)
Symbol
Rth(j-c)
Rth(j-a)
Test Condition
Max
1.3
89
Unit
/W
/W
6.
6.
6.
6. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Forward voltage
Forward voltage
Reverse current
Junction capacitance
Symbol
VF(1)
VF(2)
IR
Cj
Test Condition
IF = 6 A (pulse measurement)
IF = 12 A (pulse measurement)
VR = 650 V (pulse measurement)
VR = 650 V, f = 1 MHz
Min
Typ.
1.2
1.45
0.6
44
Max
1.6
60
Unit
V
V
µA
pF
2019-11-05
Rev.1.0
©2019
Toshiba Electronic Devices & Storage Corporation


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