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TRS12E65F 数据表(PDF) 3 Page - Toshiba Semiconductor

部件名 TRS12E65F
功能描述  SiC Schottky Barrier Diode
Download  6 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TRS12E65F 数据表(HTML) 3 Page - Toshiba Semiconductor

  TRS12E65F Datasheet HTML 1Page - Toshiba Semiconductor TRS12E65F Datasheet HTML 2Page - Toshiba Semiconductor TRS12E65F Datasheet HTML 3Page - Toshiba Semiconductor TRS12E65F Datasheet HTML 4Page - Toshiba Semiconductor TRS12E65F Datasheet HTML 5Page - Toshiba Semiconductor TRS12E65F Datasheet HTML 6Page - Toshiba Semiconductor  
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TRS12E65F
3
7.
7.
7.
7. Marking (Note)
Marking (Note)
Marking (Note)
Marking (Note)
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Marking
Marking
Marking
Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Abbreviation Code
S12E65F
Part Number
TRS12E65F
8.
8.
8.
8. Usage Considerations
Usage Considerations
Usage Considerations
Usage Considerations
(1)
The absolute maximum ratings are rated values that must not be exceeded during operation, even for an
instant.
The following are the recommended general derating methods for designing a circuit board using this
device.
VRRM : VRRM has a temperature coefficient of 0.1 %/.
Take this coefficient into account when designing a circuit board that will be operated
in a low-temperature environment.
IF(DC) : We recommend that the worst-case current be no greater than 80 % of the absolute maximum
rating of IF(DC).
IFP
: We recommend that the worst-case current be no greater than 80 % of the absolute maximum
rating of IFP.
IFSM : This rating specifies a non-repetitive limit value.
This only applies to an abnormal operation, which seldom occurs during the lifespan of a device.
Tj
: Derate device parameters in proportion to this rating in order to ensure high reliability.
We recommend that the junction temperature (Tj) of a device be kept below 140 .
(2)
For other design considerations, see the Toshiba website.
2019-11-05
Rev.1.0
©2019
Toshiba Electronic Devices & Storage Corporation


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