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GT60PR21 数据表(PDF) 2 Page - Toshiba Semiconductor

部件名 GT60PR21
功能描述  Discrete IGBTs Silicon N-Channel IGBT
Download  7 Pages
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

GT60PR21 数据表(HTML) 2 Page - Toshiba Semiconductor

  GT60PR21 Datasheet HTML 1Page - Toshiba Semiconductor GT60PR21 Datasheet HTML 2Page - Toshiba Semiconductor GT60PR21 Datasheet HTML 3Page - Toshiba Semiconductor GT60PR21 Datasheet HTML 4Page - Toshiba Semiconductor GT60PR21 Datasheet HTML 5Page - Toshiba Semiconductor GT60PR21 Datasheet HTML 6Page - Toshiba Semiconductor GT60PR21 Datasheet HTML 7Page - Toshiba Semiconductor  
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GT60PR21
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (Taaaa = 25
= 25
= 25
= 25 
 unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current (DC)
Collector current (DC)
Collector current (1 ms)
Diode forward current (DC)
Diode forward current (100 µs)
Collector power dissipation
Junction temperature
Storage temperature
Mounting torque
(Tc = 25 )
(Tc = 100 )
(Tc = 25 )
(Note 1)
Symbol
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
TOR
Rating
1100
±25
60
53
120
30
120
333
175
-55 to 175
0.8
Unit
V
A
W
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher
temperature.
In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads
to thermorunaway and results in destruction.
Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT.
Note 1: Ensure that the junction temperature does not exceed 175 .
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Junction-to-case thermal resistance
Symbol
Rth(j-c)
Max
0.45
Unit
/W
2014-01-07
Rev.2.0


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