数据搜索系统,热门电子元器件搜索
  Chinese  ▼

Delete All
ON OFF
ALLDATASHEETCN.COM

X  

预览 PDF Download HTML

GT60PR21 数据表(PDF) 3 Page - Toshiba Semiconductor

部件名 GT60PR21
功能描述  Discrete IGBTs Silicon N-Channel IGBT
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

GT60PR21 数据表(HTML) 3 Page - Toshiba Semiconductor

  GT60PR21 Datasheet HTML 1Page - Toshiba Semiconductor GT60PR21 Datasheet HTML 2Page - Toshiba Semiconductor GT60PR21 Datasheet HTML 3Page - Toshiba Semiconductor GT60PR21 Datasheet HTML 4Page - Toshiba Semiconductor GT60PR21 Datasheet HTML 5Page - Toshiba Semiconductor GT60PR21 Datasheet HTML 6Page - Toshiba Semiconductor GT60PR21 Datasheet HTML 7Page - Toshiba Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 3 / 7 page
background image
GT60PR21
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (Taaaa = 25
= 25
= 25
= 25 
 unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Diode forward voltage
Symbol
IGES
ICES
VGE(OFF)
VCE(sat)
VF
Test Condition
VGE = ±25 V, VCE = 0 V
VCE = 1100 V, VGE = 0 V
IC = 60 mA, VCE = 5 V
IC = 10 A, VGE = 15 V
IC = 60 A, VGE = 15 V
IF = 15 A, VGE = 0 V
Min
4.5
Typ.
1.1
2.0
Max
±100
0.5
7.5
2.5
2.5
Unit
nA
mA
V
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (Taaaa = 25
= 25
= 25
= 25 
 unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Reverse recovery time
Symbol
Cies
tr
ton
tf
toff
trr
Test Condition
VCE = 10 V, VGE = 0 V,
f = 100 kHz
Resistance load
VCC = 600 V, IC = 60 A,
VGG = ±15 V, RG = 51 Ω
See Figure 6.2.1, 6.2.2.
IF = 15 A, di/dt = -20 A/µs
Min
Typ.
2350
0.16
0.25
0.16
0.46
0.60
Max
0.36
Unit
pF
µs
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Test Circuit of Switching Time
Test Circuit of Switching Time
Test Circuit of Switching Time
Test Circuit of Switching Time
Fig.
Fig.
Fig.
Fig. 6.2.2
6.2.2
6.2.2
6.2.2 Timing Chart of Switching Time
Timing Chart of Switching Time
Timing Chart of Switching Time
Timing Chart of Switching Time
7.
7.
7.
7. Marking (Note)
Marking (Note)
Marking (Note)
Marking (Note)
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Marking
Marking
Marking
Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
2014-01-07
Rev.2.0


Html Pages

1  2  3  4  5  6  7 


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn