IGW75N60T datasheet(1/12 Pages) INFINEON

部件名	IGW75N60T

功能描述	Low Loss IGBT in Trench and Fieldstop technology

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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IGW75N60T

TrenchStop Series

q

Power Semiconductors

1

Rev. 2.1 Dec-04

Low Loss IGBT in Trench and Fieldstop technology

•

Very low VCE(sat) 1.5 V (typ.)

•

Maximum Junction Temperature 175 °C

•

Short circuit withstand time – 5

µs

•

Designed for :

- Frequency Converters

- Uninterrupted Power Supply

•

Trench and Fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

- low VCE(sat)

•

Positive temperature coefficient in VCE(sat)

•

Low EMI

•

Low Gate Charge

•

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

VCE

IC

VCE(sat),Tj=25°C

Tj,max

Marking Code

Package

Ordering Code

IGW75N60T

600V

75A

1.5V

175

°C

G75T60

TO-247

Q67040S4726

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCE

600

V

DC collector current, limited by Tjmax

TC = 25

°C

TC = 100

°C

IC

150

75

Pulsed collector current, tp limited by Tjmax

ICpuls

225

Turn off safe operating area (VCE

≤ 600V, Tj ≤ 175°C)

-

225

A

Gate-emitter voltage

VGE

±20

V

Short circuit withstand time

1)

VGE = 15V, VCC

≤ 400V, Tj ≤ 150°C

tSC

5

µs

Power dissipation TC = 25

°C

Ptot

428

W

Operating junction temperature

Tj

-40...+175

Storage temperature

Tstg

-55...+175

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-

260

°C

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

P-TO-247-3-1

(TO-220AC)

G

C

E

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