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UMH14N Datasheet(数据表) 1 Page - Rohm

部件型号  UMH14N
说明  General purpose (dual digital transistors)
下载  3 Pages
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制造商  ROHM [Rohm]
网页  http://www.rohm.com
标志 ROHM - Rohm

UMH14N Datasheet(HTML) 1 Page - Rohm

  UMH14N 数据表 HTML 1Page - Rohm UMH14N 数据表 HTML 2Page - Rohm UMH14N 数据表 HTML 3Page - Rohm  
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UMH14N / IMH14A
Transistors
Rev.A
1/2
General purpose (dual digital transistors)
UMH14N / IMH14A
Features
1) Two DTC144T chips in a UMT or SMT package.
Equivalent circuit
UMH14N
R1
R1
(3)
(4) (5)
(6)
(2)
(1)
IMH14A
R1
R1
(4)
(3) (2)
(1)
(5)
(6)
Package, marking, and packaging specifications
Type
UMH14N
UMT6
H14
TR
3000
IMH14A
SMT6
H14
T108
3000
Package
Marking
Code
Basic ordering unit (pieces)
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
50
50
5
100
300(TOTAL)
150(TOTAL)
UMH14N
IMH14A
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
External dimensions (Unit : mm)
UMH14N
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
0.1Min.
2.1
1.25
IMH14A
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
0.3Min.
2.8
1.6
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Transition frequency
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
50
50
5
100
250
250
0.5
0.5
0.3
600
V
V
V
µA
µA
V
MHz
R1
32.9
47
61.1
k
IC
=50µA
IC
=1mA
IE
=50µA
VCB
=50V
VEB
=4V
VCE
=10V, IE= −5mA, f=100MHz
IC/IB
=10mA/1mA
VCE/IC
=5V/1mA
∗Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance




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