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UMT2N Datasheet(数据表) 1 Page - Rohm

部件型号  UMT2N
说明  General purpose (dual transistors)
下载  3 Pages
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制造商  ROHM [Rohm]
网页  http://www.rohm.com
标志 ROHM - Rohm

UMT2N Datasheet(HTML) 1 Page - Rohm

  UMT2N 数据表 HTML 1Page - Rohm UMT2N 数据表 HTML 2Page - Rohm UMT2N 数据表 HTML 3Page - Rohm  
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EMT3 / IMT3A
Transistors
Rev.A
1/2
General purpose (dual transistors)
EMT3 / IMT3A
Features
1) Two 2SA1037AK chips in a EMT or SMT package.
Equivalent circuits
(1)
(2)
(3)
(4)
(5)
(6)
(6)
(5)
(4)
(3)
(2)
(1)
IMT3A
EMT3
Tr2
Tr1
Tr1
Tr2
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−60
−50
−6
−150
300(TOTAL)
150(TOTAL)
EMT3
IMT3A
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
∗1
∗2
Package, marking, and packaging specifications
EMT3
EMT6
T3
T2R
8000
IMT3A
SMT6
T3
T108
3000
Type
Package
Marking
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
ROHM : EMT6
EMT3
ROHM : SMT6
EIAJ : SC-74
IMT3A
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
Each lead has same dimensions
0.3Min.
2.8
1.6
Each lead has same dimensions
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Transition frequency
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
−60
−50
−6
120
140
−0.1
−0.1
−0.5
560
V
V
V
µA
µA
V
MHz
Cob
45
pF
IC
=−50µA
IC
=−1mA
IE
=−50µA
VCB
=−60V
VEB
=−6V
VCE
=−12V, IE=2mA, f=100MHz
VCE
=−12V, IE=0A, f=1MHz
IC/IB
=−50mA/−5mA
VCE
=−6V, IC=−1mA
∗Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance




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