![]() |
数据搜索系统,热门电子元器件搜索 |
|
EMD4 Datasheet(数据表) 2 Page - Rohm |
|
EMD4 Datasheet(HTML) 2 Page - Rohm |
2 page ![]() EMD4 / UMD4N Transistors Rev.B 2/4 Absolute maximum ratings (Ta = 25 °C) Limits DTr1(DTC144E) DTr2(DTA114Y) Parameter Symbol VCC −50 −40 to +6 −70 −100 50 −10 to +40 30 100 120(1ELEMENT) 150(TOTAL) V V mA mW VIN IO IC(Max.) Pd 150 −55 to +150 °C °C Tj Tstg Unit Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Electrical characteristics (Ta = 25 °C) DTr 1 Parameter Symbol VI(off) VI(on) VO(on) II IO(off) R1 GI R2/R1 fT Min. − 3 − − − 32.9 68 0.8 − − − 0.1 − − 47 − 1 250 0.5 − 0.3 0.18 0.5 61.1 − 1.2 − V VCC =5V, IO=100µA VO =0.3V, IO=2mA IO/II =10mA/0.5mA VI =5V VCC =50V, VI=0V VO =5V, IO=5mA VCE =10V, IE=−5mA, f=100MHz ∗ V mA µA k Ω − −− − MHz Typ. Max. Unit Conditions Input voltage Output voltage Input current Output current Input resistance DC current gain Resistance ratio Transition frequency ∗ Transition frequency of the device DTr 2 Parameter Symbol VI(off) VI(on) VO(on) II IO(off) R1 GI R2/R1 fT Min. − −1.4 − − − 7 68 3.7 − − − −0.1 − − 10 − 4.7 250 −0.3 − −0.3 −0.88 −0.5 13 − 5.7 − V VCC = −5V, IO= −100µA VO = −0.3V, IO= −1mA IO/II = −5mA / −0.25mA VI = −5V VCC = −50V, VI=0V VO = −5V, IO= −5mA VCE = −10V, IE=5mA, f=100MHz ∗ V mA µA k Ω − −− − MHz Typ. Max. Unit Conditions Input voltage Output voltage Input current Output current Input resistance DC current gain Resistance ratio Transition frequency ∗ Transition frequency of the device |