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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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IMX25 Datasheet(数据表) 1 Page - Rohm |
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IMX25 Datasheet(HTML) 1 Page - Rohm |
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1 page 
IMX25 Transistors 1/4 General purpose transistor (isolated dual transistors) IMX25 Features 1) Two 2SD2704K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistorelementsareindependent,eliminating interference. 4) Mounting cost and area can be cut in half. Structure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. External dimensions (Unit : mm) ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: X25 (1) (2) (3) 0.3 + 0.1 −0.05 (6) (5) (4) 0.95 0.95 1.9±0.2 2.9±0.2 1.1+0.2 0.8±0.1 −0.1 0 to 0.1 0.15 −0.06 +0.1 All terminals have same dimensions Absolute maximum ratings (Ta=25 °C) Equivalent circuit Parameter Symbol Limits Unit VCBO 50 V VCEO 20 V VEBO 25 V IC 300 mA Tj 150 °C Tstg −55 to +150 °C Pd 300(TOTAL) mW ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Power dissipation ∗ 200mW per element must not be exceeded. Tr2 Tr1 (4) (5) (6) (3) (2) (1) Electrical characteristics (Ta=25 °C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) Min. 50 20 25 − − 820 − − − − − − − 50 − − − 0.1 0.1 2700 100 V IC =10µA IC =1mA IE =10µA VCB =50V VEB =25V VCE =2V, IC=4mA IC/IB =30mA/3mA V V µA µA − V Typ. Max. Unit Conditions fT Ron Cob − − − 35 0.7 3.9 − − − VCE =6V, IE=−4mA, f=10MHz IB =5mA, Vi=100mVrms, f=1kHz VCB =10V, IE=0A, f=1MHz MHz Ω pF Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Output capacitance Output On-resistance Collector-emitter saturation voltage |
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