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IMX9 Datasheet(数据表) 1 Page - Rohm

部件型号  IMX9
说明  General purpose transistor (isolated dual transistors)
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制造商  ROHM [Rohm]
网页  http://www.rohm.com
标志 ROHM - Rohm

IMX9 Datasheet(HTML) 1 Page - Rohm

  IMX9 数据表 HTML 1Page - Rohm IMX9 数据表 HTML 2Page - Rohm IMX9 数据表 HTML 3Page - Rohm IMX9 数据表 HTML 4Page - Rohm  
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IMX9
Transistors
General purpose transistor
(isolated dual transistors)
IMX9
Features
1) Two 2SD2114K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting
machine.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
Structure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr1 and Tr2.
External dimensions (Units : mm)
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol: X9
(1)
(2)
(3)
0.3
+0.1
−0.05
(6)
(5)
(4)
0.95 0.95
1.9±0.2
2.9±0.2
1.1+0.2
0.8±0.1
−0.1
0~0.1
0.15 −0.06
+0.1
All terminals have same dimensions
Absolute maximum ratings (Ta = 25
°C)
Equivalent circuit
Parameter
Symbol
Limits
Unit
VCBO
25
V
VCEO
20
V
VEBO
12
V
IC
500
mA
Tj
150
°C
Tstg
−55~+150
°C
Pd
300(TOTAL)
mW
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power dissipation
200mW per element must not be exceeded.
Tr2
Tr1
(4)
(5)
(6)
(3)
(2)
(1)
Electrical characteristics (Ta = 25
°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
Min.
25
20
12
560
0.18
0.5
0.5
2700
0.4
V
IC
=10µA
IC
=1mA
IE
=10µA
VCB
=20V
VEB
=10V
VCE
=3V, IC=10mA
IC/IB
=500mA/20mA
V
V
µA
µA
V
Typ.
Max.
Unit
Conditions
fT
Ron
Cob
350
0.8
8
VCE
=10V, IE=−50mA, f=100MHz
IB
=1mA, Vi=100mVrms, f=1kHz
VCB
=10V, IE=0A, f=1MHz
MHz
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance
Collector-emitter saturation voltage




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