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IMX9 数据表(PDF) 1 Page - Rohm |
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IMX9 数据表(HTML) 1 Page - Rohm |
1 / 4 page IMX9 Transistors General purpose transistor (isolated dual transistors) IMX9 Features 1) Two 2SD2114K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. External dimensions (Units : mm) ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: X9 (1) (2) (3) 0.3 +0.1 −0.05 (6) (5) (4) 0.95 0.95 1.9±0.2 2.9±0.2 1.1+0.2 0.8±0.1 −0.1 0~0.1 0.15 −0.06 +0.1 All terminals have same dimensions Absolute maximum ratings (Ta = 25 °C) Equivalent circuit Parameter Symbol Limits Unit VCBO 25 V VCEO 20 V VEBO 12 V IC 500 mA Tj 150 °C Tstg −55~+150 °C Pd 300(TOTAL) mW ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Power dissipation ∗ 200mW per element must not be exceeded. Tr2 Tr1 (4) (5) (6) (3) (2) (1) Electrical characteristics (Ta = 25 °C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) Min. 25 20 12 − − 560 − − − − − − − 0.18 − − − 0.5 0.5 2700 0.4 V IC =10µA IC =1mA IE =10µA VCB =20V VEB =10V VCE =3V, IC=10mA IC/IB =500mA/20mA V V µA µA − V Typ. Max. Unit Conditions fT Ron Cob − − − 350 0.8 8 − − − VCE =10V, IE=−50mA, f=100MHz IB =1mA, Vi=100mVrms, f=1kHz VCB =10V, IE=0A, f=1MHz MHz Ω pF Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Transition frequency Output capacitance Output On-resistance Collector-emitter saturation voltage |
类似零件编号 - IMX9 |
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类似说明 - IMX9 |
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