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ZXMP6A17GTC 数据表(PDF) 2 Page - VBsemi Electronics Co.,Ltd

部件名 ZXMP6A17GTC
功能描述  P-Channel 60-V (D-S) MOSFET
Download  7 Pages
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制造商  VBSEMI [VBsemi Electronics Co.,Ltd]
网页  www.VBsemi.cn
标志 VBSEMI - VBsemi Electronics Co.,Ltd

ZXMP6A17GTC 数据表(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 60
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
68
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
- 5.2
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
- 2.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 60 V, VGS = 0 V
- 1
µA
VDS = - 60 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS =-5 V, VGS = - 10 V
- 25
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 3 A
0.0
VGS = - 4.5 V, ID = - 2 A
0.0
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 5 A
20
S
Dynamicb
Input Capacitance
Ciss
VDS = - 25 V, VGS = 0 V, f = 1 MHz
1500
pF
Output Capacitance
Coss
200
Reverse Transfer Capacitance
Crss
150
Total Gate Charge
Qg
VDS = - 30 V, VGS = - 10 V, ID = - 5 A
38
56
nC
VDS = - 30 V, VGS = - 4.5 V, ID = - 5 A
19
30
Gate-Source Charge
Qgs
9
Gate-Drain Charge
Qgd
10
Gate Resistance
Rg
f = 1 MHz
5.2
Turn-On Delay Time
td(on)
VDD = - 2 V, RL = 2 Ω
ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω
10
15
ns
Rise Time
tr
715
Turn-Off Delay Time
td(off)
70
110
Fall Time
tf
40
60
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 6
.9
A
Pulse Diode Forward Currenta
ISM
- 15
Body Diode Voltage
VSD
IS = - 3 A
- 1
- 1.5
V
Body Diode Reverse Recovery Time
trr
IF = - 5 A, di/dt = 10 A/µs, TJ = 25 °C
45
68
ns
Body Diode Reverse Recovery Charge
Qrr
59
120
nC
Reverse Recovery Fall Time
ta
29
ns
Reverse Recovery Rise Time
tb
16
55
65
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
ZXMP6A17GTC
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