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2011 ROHM Co., Ltd. All rights reserved.

2011.10 - Rev.D

High-gain Amplifier Transistor (32V , 0.3A)

2SD1383K

Features

Dimensions (Unit : mm)

1) Darlington connection for high DC current gain.

2) Built-in 4k

 resistor between base and emitter.

3) Complements the 2SB852K.

Packaging specifications

Type

Package

Marking

Code

Basic ordering unit (pieces)

2SD1383K

SMT3

B

W

∗

T146

3000

Circuit diagram

4k

Ω

E : Emitter

B : Base

C : Collector

C

B

E

Absolute maximum ratings (Ta=25

C)

Parameter

Symbol

Tj

Tstg

Limits

40

32

6

0.3

0.2

150

−55 to +150

∗1

∗2

Unit

V

V

V

A (DC)

1.5

A (Pulse)

W

°C

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

∗2 Single pulse Pw=10ms

Electrical characteristics (Ta=25

C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

−

250

−

MHz

40

−−

V

=100μA

32

−−

V

6

−−

V

=100μA

−−

1

−−

1

5000

−

−−

−−

1.5

V

Cob

−

3

−

pF

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

Each lead has same dimensions

2SD1383K

(1)Emitter

(2)Base

(3)Collector