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NVH4L020N120SC1 Datasheet(数据表) 3 Page - ON Semiconductor

部件型号  NVH4L020N120SC1
说明  MOSFET - SiC Power, Single N-Channel, TO247-4L
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制造商  ONSEMI [ON Semiconductor]
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NVH4L020N120SC1 Datasheet(HTML) 3 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Parameter
Unit
Max
Typ
Min
Test Condition
Symbol
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
tRR
VGS = −5/20 V, ISD = 80 A,
dIS/dt = 1000 A/ms
30
ns
Reverse Recovery Charge
QRR
225
nC
Reverse Recovery Energy
EREC
16
mJ
Peak Reverse Recovery Current
IRRM
15
A
Charge time
Ta
16
ns
Discharge time
Tb
15
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Switching characteristics are independent of operating junction temperature




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