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NVH4L020N120SC1 Datasheet(数据表) 2 Page - ON Semiconductor

部件型号  NVH4L020N120SC1
说明  MOSFET - SiC Power, Single N-Channel, TO247-4L
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NVH4L020N120SC1 Datasheet(HTML) 2 Page - ON Semiconductor

  NVH4L020N120SC1 数据表 HTML 1Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 2Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 3Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 4Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 5Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 6Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 7Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 8Page - ON Semiconductor  
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Case − Steady State (Note 2)
RqJC
0.3
°C/W
Junction−to−Ambient − Steady State (Notes 1, 2)
RqJA
40
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 1 mA
1200
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 1 mA, referenced to 25°C
0.5
V/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 1200 V
TJ = 25°C
100
mA
TJ = 175°C
1
mA
Gate−to−Source Leakage Current
IGSS
VGS = +25/−15 V, VDS = 0 V
±1
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 20 mA
1.8
2.7
4.3
V
Recommended Gate Voltage
VGOP
−5
+20
V
Drain−to−Source On Resistance
RDS(on)
VGS = 20 V, ID = 60 A, TJ = 25°C
20
28
mW
VGS = 20 V, ID = 60 A, TJ = 175°C
37
50
Forward Transconductance
gFS
VDS = 20 V, ID = 60 A
36
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 800 V
2943
pF
Output Capacitance
COSS
258
Reverse Transfer Capacitance
CRSS
24
Total Gate Charge
QG(TOT)
VGS = −5/20 V, VDS = 600 V,
ID = 80 A
220
nC
Threshold Gate Charge
QG(TH)
33
Gate−to−Source Charge
QGS
66
Gate−to−Drain Charge
QGD
63
Gate−Resistance
RG
f = 1 MHz
1.6
W
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5)
Turn−On Delay Time
td(ON)
VGS = −5/20 V,
VDS = 800 V,
ID = 80 A,
RG = 2 W
inductive load
21.6
35
ns
Rise Time
tr
21
34
Turn−Off Delay Time
td(OFF)
41
66
Fall Time
tf
10
20
Turn−On Switching Loss
EON
494
mJ
Turn−Off Switching Loss
EOFF
397
Total Switching Loss
Etot
891
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
Current
ISD
VGS = −5 V, TJ = 25°C
46
A
Pulsed Drain−Source Diode Forward
Current (Note 3)
ISDM
408
Forward Diode Voltage
VSD
VGS = −5 V, ISD = 30 A, TJ = 25°C
3.7
V




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