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NVH4L020N120SC1 Datasheet(数据表) 1 Page - ON Semiconductor

部件型号  NVH4L020N120SC1
说明  MOSFET - SiC Power, Single N-Channel, TO247-4L
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NVH4L020N120SC1 Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2019
April, 2020 − Rev. 2
1
Publication Order Number:
NVH4L020N120SC1/D
MOSFET - SiC Power, Single
N-Channel, TO247-4L
1200 V, 20 mW, 102 A
NVH4L020N120SC1
Features
Typ. RDS(on) = 20 mW
Ultra Low Gate Charge (QG(tot) = 220 nC)
High Speed Switching with Low Capacitance (Coss = 258 pF)
100% Avalanche Tested
AEC−Q101 Qualified and PPAP Capable
This Device is Pb−Free and is RoHS Compliant
Typical Applications
Automotive On Board Charger
Automotive DC/DC Converter for EV/HEV
Automotive Traction Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
1200
V
Gate−to−Source Voltage
VGS
−15/+25
V
Recommended Operation Values
of Gate−to−Source Voltage
TC < 175°C
VGSop
−5/+20
V
Continuous Drain
Current (Note 2)
Steady
State
TC = 25°C
ID
102
A
Power Dissipation
(Note 2)
PD
510
W
Continuous Drain
Current (Notes 1, 2)
Steady
State
TC = 100°C
ID
84
A
Power Dissipation
(Notes 1, 2)
PD
255
W
Pulsed Drain Current
(Note 3)
TA = 25°C
IDM
408
A
Single Pulse Surge
Drain Current Capability
TA = 25°C, tp = 10 ms,
RG = 4.7 W
IDSC
807
A
Operating Junction and Storage Temperature
Range
TJ, Tstg
−55 to
+175
°C
Source Current (Body Diode)
IS
46
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 23 A, L = 1 mH) (Note 4)
EAS
264
mJ
Maximum Lead Temperature for Soldering
(1/8″ from case for 5 s)
TL
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. JA is constant value to follow guide table of LV/HV discrete final datasheet
generation.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
3. Repetitive rating, limited by max junction temperature.
4. EAS of 264 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23 A,
VDD = 120 V, VGS = 18 V.
D
G
S1
S2
www.onsemi.com
V(BR)DSS
RDS(ON) MAX
ID MAX
1200 V
28 mW @ 20 V
102 A
N−CHANNEL MOSFET
TO247−4L
CASE 340CJ
ORDERING INFORMATION
Device
Package
Shipping
NVH4L020N120SC1
TO247−4L
30 ea /
Tube
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Lot Traceability
NVH4L020N120SC1 = Specific Device Code
AYWWZZ
NVH4L020
N120SC1
MARKING DIAGRAM
D
S1
G
S2
S1: Kelvin Source
S2: Power Source




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