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NVH4L020N120SC1 Datasheet(数据表) 6 Page - ON Semiconductor

部件型号  NVH4L020N120SC1
说明  MOSFET - SiC Power, Single N-Channel, TO247-4L
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制造商  ONSEMI [ON Semiconductor]
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NVH4L020N120SC1 Datasheet(HTML) 6 Page - ON Semiconductor

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6
TYPICAL CHARACTERISTICS
Figure 13. Junction−to−Ambient Thermal Response
t, RECTANGULAR PULSE DURATION (sec)
0.01
0.001
0.0001
0.1
0.00001
0.1
1
2
50% Duty Cycle
Single Pulse
20%
10%
5%
2%
1%
0.001
0.01
PDM
t1
Notes:
ZqJC (t) = r(t) x RqJC
RqJC = 0.30°C/W
Peak TJ = PDM x ZqJC (t) + TC
Duty Cycle, D = t1/t2
t2




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