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NVH4L020N120SC1 Datasheet(数据表) 5 Page - ON Semiconductor

部件型号  NVH4L020N120SC1
说明  MOSFET - SiC Power, Single N-Channel, TO247-4L
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NVH4L020N120SC1 Datasheet(HTML) 5 Page - ON Semiconductor

  NVH4L020N120SC1 数据表 HTML 1Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 2Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 3Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 4Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 5Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 6Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 7Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 8Page - ON Semiconductor  
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NVH4L020N120SC1
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5
TYPICAL CHARACTERISTICS
Figure 7. Gate−to−Source Voltage vs. Total
Charge
Figure 8. Capacitance vs. Drain−to−Source
Voltage
Qg, GATE CHARGE (nC)
250
0
−5
0
20
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
tAV, TIME IN AVALANCHE (ms)
TC, CASE TEMPERATURE (°C)
10
0.001
1
10
150
100
25
0
120
Figure 11. Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1K
10
1
0.1
0.01
1
10
1000
ID = 80 A
Ciss
Coss
Crss
125
VGS = 20 V
100
5
Figure 12. Single Pulse Maximum Power
Dissipation
t, PULSE WIDTH (sec)
0.00001
10K
100K
VDD = 400 V
0.0001
0.001
0.1
100
RqJC = 0.30°C/W
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1
10
100
1K
100K
0.1
1
100
10
800
40
75
1K
Single Pulse
TJ = Max Rated
RqJC = 0.3°C/W
TC = 25°C
10 ms
100 ms
1 ms
10
15
100
80
50
175
VDD = 800 V
VDD = 600 V
f = 1 MHz
VGS = 0 V
1
0.1
0.01
TJ = 150°C
TJ = 25°C
20
60
100
100 ms
10 ms
5K
0.01
Single Pulse
RqJC = 0.30°C/W
TC = 25°C
100
200
50
150
0.1
100
10K




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