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NVH4L020N120SC1 Datasheet(数据表) 4 Page - ON Semiconductor

部件型号  NVH4L020N120SC1
说明  MOSFET - SiC Power, Single N-Channel, TO247-4L
下载  8 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

NVH4L020N120SC1 Datasheet(HTML) 4 Page - ON Semiconductor

  NVH4L020N120SC1 数据表 HTML 1Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 2Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 3Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 4Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 5Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 6Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 7Page - ON Semiconductor NVH4L020N120SC1 数据表 HTML 8Page - ON Semiconductor  
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NVH4L020N120SC1
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4
TYPICAL CHARACTERISTICS
16 V
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
2
0
0
200
250
250
50
0
0.5
1.0
1.5
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
TJ, JUNCTION TEMPERATURE (°C)
VGS, GATE−TO−SOURCE VOLTAGE (V)
175
125
75
25
0
−50
0.7
5
160
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
VGS, GATE−TO−SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
12
8
4
2
0
120
7
5
4
2
3
17 V
19 V
18 V
VGS = 20 V
VGS = 16 V
1.5
1.9
ID = 60 A
VGS = 20 V
10
15
0
120
TJ = 25°C
ID = 60 A
VDS = 20 V
TJ = 175°C
TJ = 25°C
36
30
300
−75
16
10
8
6
14
150
40
150
1.1
1.7
20
4
50
100
0.9
1.3
20
40
6
60
80
10
8
100
−25
50
100
150
TJ = −55°C
TJ = 175°C
TJ = 25°C
2.0
19 V
20 V
TJ = 150°C
TJ = −55°C
VGS = −5 V
2.5
200
17 V
18 V
80
100
1




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