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CY7C1310AV18 数据表(PDF) 1 Page - Cypress Semiconductor

部件名 CY7C1310AV18
功能描述  18-Mb QDR-II SRAM 2-Word Burst Architecture
Download  21 Pages
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制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
标志 CYPRESS - Cypress Semiconductor

CY7C1310AV18 数据表(HTML) 1 Page - Cypress Semiconductor

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PRELIMINARY
18-Mb QDR™-II SRAM 2-Word Burst Architecture
CY7C1310AV18
CY7C1312AV18
CY7C1314AV18
Cypress Semiconductor Corporation
3901 North First Street
San Jose
, CA 95134
408-943-2600
Document #: 38-05497 Rev. *A
Revised June 1, 2004
Features
• Separate independent Read and Write data ports
— Supports concurrent transactions
• 167-MHz clock for high bandwidth
• 2-Word Burst on all accesses
• Double Data Rate (DDR) interfaces on both Read and
Write ports (data transferred at 333 MHz) @ 167MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two output clocks (C and C) account for clock skew
and flight time mismatching
• Echo clocks (CQ and CQ) simplify data capture in high
speed systems
• Single multiplexed address input bus latches address
inputs for both Read and Write ports
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• Available in x8, x18, and x36 configurations
• Full data coherancy , providing most current data
• Core Vdd=1.8V(+/-0.1V);I/O Vddq=1.4V to Vdd
• 13 x 15 x 1.4 mm 1.0-mm pitch FBGA package, 165 ball
(11x15 matrix)
• Variable drive HSTL output buffers
• JTAG 1149.1 compatible test access port
• Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1310AV18 – 2M x 8
CY7C1312AV18 – 1M x 18
CY7C1314AV18 – 512K x 36
Functional Description
The CY7C1310AV18/CY7C1312AV18/CY7C1314AV18 are
1.8V Synchronous Pipelined SRAMs, equipped with QDR-II
architecture. QDR-II architecture consists of two separate
ports to access the memory array. The Read port has
dedicated Data Outputs to support Read operations and the
Write Port has dedicated Data Inputs to support Write opera-
tions. QDR-II architecture has separate data inputs and data
outputs to completely eliminate the need to “turn-around” the
data bus required with common I/O devices. Access to each
port is accomplished through a common address bus. The
Read address is latched on the rising edge of the K clock and
the Write address is latched on the rising edge of the K clock.
Accesses to the QDR-II Read and Write ports are completely
independent of one another. In order to maximize data
throughput, both Read and Write ports are equipped with
Double Data Rate (DDR) interfaces. Each address location is
associated with two 8-bit words (CY7C1310AV18) or 18-bit
words (CY7C1312AV18) or 36-bit words (CY7C1314AV18)
that burst sequentially into or out of the device. Since data can
be transferred into and out of the device on every rising edge
of both input clocks (K and K and C and C), memory bandwidth
is maximized while simplifying system design by eliminating
bus “turn-arounds.”
Depth expansion is accomplished with Port Selects for each
port. Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
Logic Block Diagram (CY7C1310AV18)
CLK
A(19:0)
Gen.
K
K
Control
Logic
Address
Register
D[7:0]
Read Data Reg.
RPS
WPS
Q[7:0]
Control
Logic
Address
Register
Reg.
Reg.
Reg.
8
20
8
16
8
BWS[1:0]
VREF
8
A(19:0)
20
C
C
8
Write
Reg
Write
Reg
CQ
CQ
8
DOFF


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