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2
9
6
10
4
3
5
8
7
8a
2
1
AIN
VMIC
MGND
AOUT
BIN
MPO
VB
BOUT
PGND
CIN
PGND
PARAMETER
SYMBOL
CONDITION
MIN
TYP
MAX
UNITS
System Gain
A
V
V
IN
= -80 dBV, Frequency = 5 kHz
44.5
46.5
48.5
dB
Amplifier Current
I
AMP
V
IN
= 0, R
MPO
= 0
Ω
75
150
225
µA
Maximum Output
MPO
V
IN
= -50 dBV, R
MPO
= 0
Ω
-16
-14
-12
dBV
MPO Range
∆MPO
V
IN
= -50 dBV, R
MPO
= 10 k
Ω
10
12
14
dB
Input Referred Noise
IRN
NFB at 200 Hz to 10 kHz
-
2
-
µVRMS
Distortion
THD
-
<1.0
-
%
On Chip Pull-up Resistance
R
PULL
-48
-
k
Ω
On Chip Microphone Resistor
R
MIC
-4
-
k
Ω
Mic Decoupling Capacitor
C1
-20%
3.3
+20%
µF
Input Coupling Capacitor
C2
-10%
0.047
+10%
µF
Interstage Coupling Capacitor
C3
-10%
0.047
+10%
µF
Output Coupling Capacitor
C4
-10%
0.047
+10%
µF
Output Resistor
R1
-5%
48
+5%
k
Ω
Output Impedance (Pad 9)
R
OUT
-24
-
k
Ω
ABSOLUTE MAXIMUM RATINGS
PARAMETER
VALUE & UNITS
Supply Voltage
3 V DC
Power Dissipation
25 mW
Operating Temperature
-10 to + 40
°C
Storage Temperature
-20 to +70
°C
CAUTION
CLASS 1 ESD SENSITIVITY
PIN CONNECTION
ELECTRICAL CHARACTERISTICS
Conditions: Temperature 25 oC, Frequency = 1 kHz.
(All conditions and parameters remain as shown in test circuit unless stated in condition column)
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