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IXTP14N60X2 Datasheet(数据表) 2 Page - IXYS Corporation

部件型号  IXTP14N60X2
说明  X2-Class Power MOSFET
下载  7 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXTP14N60X2 Datasheet(HTML) 2 Page - IXYS Corporation

  IXTP14N60X2 数据表 HTML 1Page - IXYS Corporation IXTP14N60X2 数据表 HTML 2Page - IXYS Corporation IXTP14N60X2 数据表 HTML 3Page - IXYS Corporation IXTP14N60X2 数据表 HTML 4Page - IXYS Corporation IXTP14N60X2 数据表 HTML 5Page - IXYS Corporation IXTP14N60X2 数据表 HTML 6Page - IXYS Corporation IXTP14N60X2 数据表 HTML 7Page - IXYS Corporation  
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IXTP14N60X2
Littelfuse reserves the right to change limits, test conditions and dimensions.
Note 1. Pulse test, t
 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065B1
6,683,344
6,727,585
7,005,734B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123B1
6,534,343
6,710,405B2
6,759,692
7,063,975B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728B1
6,583,505
6,710,463
6,771,478B2 7,071,537
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
I
S
V
GS = 0V
14
A
I
SM
Repetitive, pulse Width Limited by T
JM
56
A
V
SD
I
F = IS, VGS = 0V, Note 1
1.4
V
t
rr
320
ns
Q
RM
4.3
µC
I
RM
27.0
A
I
F = 7A, -di/dt = 100A/µs
V
R = 100V
Symbol
Test Conditions
Characteristic Values
(T
J = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
g
fs
V
DS = 10V, ID = 0.5 • ID25, Note 1
7
12
S
R
Gi
Gate Input Resistance
5
C
iss
740
pF
C
oss
V
GS = 0V, VDS = 25V, f = 1MHz
1310
pF
C
rss
20
pF
C
o(er)
55
pF
C
o(tr)
160
pF
t
d(on)
23
ns
t
r
27
ns
t
d(off)
75
ns
t
f
17
ns
Q
g(on)
16.7
nC
Q
gs
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
4.7
nC
Q
gd
7.7
nC
R
thJC
0.69
C/W
R
thCS
TO-220
0.50
C/W
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
R
G = 30 (External)
Effective Output Capacitance
Energy related
Time related
V
GS = 0V
V
DS = 0.8 • VDSS




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